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III-V 族化合物半导体异质结构器件中的辐射效应
The radiation effects in Ill-V heterojunction devices are investigated in this thesis. Two types of heterojunction devic...
元素和化合物半导体薄膜的激光退火
Although the A1 - Sb system was chosen for this experiment partly because of the remarkably close melting points of A1 ...
化合物半导体光伏组件参数提取方法
The parameters extraction method of the single diode model is usually used to analyse silicon-based solar cells to pred...
化合物半导体器件中掺杂剂相关带隙变窄的研究
Band gap narrowing (BGN) is one of the crucial heavy-doping effects to be considered for bipolar devices. Using a physic...
化合物半导体射频器件的数值分析
An overview of heterostructure RF device simulation for industrial application based on III-V compound semiconductors ha...
化合物半导体纳米粒子的表面键合效应
This is a preprint of a paper intended for publication in a journal or proceedings. Since changes may be made before pu...
化合物半导体纳米线光电探测器
Light detection by semiconductor nanowires (NWs) is an active area of research. The interest in NW photodetector devices...
化合物半导体表面的电子控制化学稳定性
Effects of humid environment on the degradation of semiconductors were studied to understand the role of the surface ch...
化合物半导体表面金属纳米粒子的形成与性质
First and foremost, I would like to express my heartfelt thanks to my thesis advisor Professor Rachel S. Goldman for gu...
化合物半导体衬底加工的进展
Compound semiconductor materials such as GaAs and InP have distinct advantages over the more traditional silicon, chief ...