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单晶片背面和斜面清洁
关键词:背面兆频超声波,背面清洁,粒子去除效率。 介绍 在IC制造中,从晶圆背面(BS)去除颗粒变得与从正面(FS)去除颗粒一样重要。例如,在光刻过程中,; BS颗粒会导致顶侧表面形貌的变化。由于焦深(DOF)的处理窗口减小,这可能导致焦点...
单晶片背面和斜面清洁
关键词:背面兆频超声波,背面清洁,粒子去除效率。 介绍 在IC制造中,从晶圆背面(BS)去除颗粒变得与从正面(FS)去除颗粒一样重要。例如,在光刻过程中,; BS颗粒会导致顶侧表面形貌的变化。由于焦深(DOF)的处理窗口减小,这可能导致焦点...
在先进的单晶片光刻胶处理系统上使用独特的无溶剂相流体进行超音速增强光刻胶去除
Introduction Removal of photoresist materials (resist stripping) is very straightforward in theory, but can be difficul...
单晶刀清洗过程:分散现象对冲洗时间的影响
IntroductionA better understanding of wet processes in silicon wafer fabrication is of great importance to i...
高效单晶圆清洗工艺
Abstract. Current work describes development, testing and verification of a single wafer megasonic cleaning method util...
使用物理去除力的单晶片清洁工具的清洁和损坏性能
We evaluated the trade off between damage generation and particle removal of single wafer aerosol spray and megasonic cl...
单晶片处理中的无损伤清洁
IntroductionIt has been well established that single wafer cleaning tools can achieve reduced cycle times and improved c...
单晶片工具上的栅极氧化物清洁
Abstract Single-wafer die-level fusion bonding (SDFB) process is proposed, which can reduce the mask number and fabricat...
单晶片工具上的栅极氧化物清洁
Pre gate oxide and especially “Double Gate Oxide” cleans are the most critical surface preparation steps in the semicon...
单晶片材料去除和表面生成的研究
Abstract: A new method of ultrasonic chemical mechanical polishing (CMP) combined withultrasonic lapping is introduced t...