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蚀刻过程中砷在GaAs上的形成
III-V solar cell technology is important in space and concentrated photovoltaic (CPV) applications.1 From a fundamental ...
GaAs 和GaN 的湿热氧化
1. Introduction The chapter is devoted to the thermal wet oxidation of AIIIBV semiconductor compounds, mainl...
GaAs 和GaN 的湿热氧化
Purpose: The aim of this study was to evaluate the success rate of ITI implants with the SLA surface that were loaded af...
通过原子氢表面清洁实现GaAs晶圆键合
A method of large-area wafer bonding of GaAs is proposed. The bonding procedure was carried outin an ultrahigh vacuum. T...
快速扩大 GaAs晶圆背面处理的挑战
ABSTRACTThe dramatic increase in demand for GaAs basedpHEMT and HBT devices has required the expansion ofwafer FAB capac...
InGaAsP晶圆的化学蚀刻
ExperimentalThe InGaAsP/InP DH wafers employed were grownby low temperature liquid phase epitaxy (13).Theepitaxial layer...
InGaAs薄膜波导
ABSTRACTMid-infrared (mid-IR) absorption spectroscopy based on integrated photonic circuits has shown great promise in t...
基于InGaAs异质结构的红外传感器
1. Introduction At present time, problem of detection of low-level short duration signals at the wavelengths from 0,9 ...
盐酸等溶液中GaAs和InP的选择性湿蚀
Experimental Materials used for the etching studies were Fe-doped InP and Cr-doped GaAs substrates, and GaInP grown on...
InGaP和GaAs在HCl中的湿蚀刻
1. Introduction InGaP, a wide band gap compound semiconductor, is currently attracting a great deal of attention. Occas...