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湿刻蚀微透镜集成的InGaAs光二极管增强光耦合性能
In this letter, we present fabrications and device characteristics of InGaAs p-i-n photodiodes, in which semiconductor m...
GaN/GaAs半导体结构的电学性能
The samples reported here were grown in two identical vacuum-connected Perkin Elmer 430 molecular beam epitaxy (MBE) sy...
GaAs AlAs 超晶格中热导率的各向异性
We combine the transient thermal grating and time-domain thermoreflectance techniques to characterize the anisotropic th...
InAlAs InGaAs HEMT制程中栅槽刻蚀问题分析
我们开发了一种InAlAs/InGaAs异质高电子迁移率晶体管器件制造工艺，其中栅极长度可以在0.13 μm–0.16 μm范围内调节，以适应预期的应用。核心工艺是一个两步电子束光刻工艺，使用三层光刻胶和柠檬酸刻蚀工艺。开发了一个电子束光刻...
采用 PEELER 技术在多孔锗衬底上生长的高效 GaAs 太阳能电池
III–V solar cells are mainly grown on GaAs or Ge substrate, which significantly contributes to the final cost and affect...
4H-SiC 上 GaAs (111) 的外延生长及表征
ABSTRACT SiC is an indirect bandgap semiconductor with material properties ideal for power electronics but not so much a...