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使用臭氧技术去除光刻胶
As the semiconductor industry shifts from 200- to 300-mm wafers, the use of ozonated deionized water (DIO3) in surface c...
Marangoni对胶体薄膜蒸发光刻图案的影响
I. INTRODUCTIONThe solution coating of colloidal particles is frequently used in the production of displays and other op...
晶片光刻胶处理系统
In this work the application of a new generation of phase-fluid stripping solutions (intelligent fluid®) to a variety of...
旋涂金属氧化物及其在下一代光刻中的应用
Metal oxide or metal nitride films are used as hard mask materials in the semiconductorlithography processes due to thei...
纳米压印光刻技术
Abstract Nanoimprint lithography (NIL) is an emerging micro/nano-patterning technique, which is a high-resolution, high...
使用臭氧的新型光刻胶剥离技术
Abstract The authors have developed a new process as an alternative to sulfuric peroxide mixture (SPM) cleaning of Si wa...
光刻胶膜厚均匀性的实时预测控制
Abstract With the trends toward larger wafer size and thelinewidth going below 100 nm, one of the challenges is to contr...
纳米颗粒薄膜的图案光刻技术
A lithographic approach to generate clean palterms of multiple types of nanoparticles on one 4-inch silicon wafer is dem...
EUV光刻中的随机效应
This paper focusses onstochastic printing failures,suchas microbrid es in spaces or randomly mis s ing contacts. Wequant...
MEMS 应用中不同厚光刻胶的比较研究
This work reports on recent advances in microfabrication process technology for mediumto high-aspect ratio structures re...
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