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显影剂强度对模型 EUV光刻胶的图案化能力的影响
The demand for increased functionality and performance of electronic devices is called for by the 30 % shrink and doubl...
二氧化碳低温预处理后湿清洗去除光刻离子胶
In FEOL processing, doping of active areas like source, drain, and extensions (NMOS and PMOS) is done by ion implantati...
无掩膜紫外光刻技术
Photolithography is the preferred method of micro-patterning, not only in electronics manufacturing but also in such em...
LED光刻技术快速制造微流控芯片
Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. Th...
使用InGaN微LED的亚微光光刻技术
Abstract—The fabrication of gallium-nitride based (GaN) light emitting diode (LED) arrays by a direct writing technique...
使用 UV LED 的无掩模光刻
A UV light emitting diode (LED) with a maximum output of 372 nm was collimated using a pinhole and a small plastic tube ...
使用快速晶片级LED光刻图案制作的微流控装置
Current lithography approaches underpinning the fabrication of microflfluidic devices rely on UV exposure of photoresist...
用于LED表征的光学显微镜和光刻
We demonstrate capabilities of near-field scanning optical microscopy (NSOM) in collection and illumination mode. NSOM ...
用于集成电路制造的光刻胶剥离和或光掩模清洁的工艺顺序
A method and system for cleaning and/or stripping photo resist from photomasks used in integrated circuit manufac turi...
反射电子束光刻
REBL (Reflective Electron Beam Lithography) is being developed for high throughput electron beam direct write maskless ...