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碳化硅热氧化
Thermal oxidation of silicon carbide (SiC) surface is based on the formation of either an active oxide (SiO,layer (Gate)...
硅晶片的润湿性和老化行为
AbstractThis paper reports on the wettability and aging behaviors of the silicon wafers that hadbeen cleaned using a pir...
硅上多晶磷化铟的生长和表征
AbstractIIl-V thin film solar cells attract large interest among the scientific community as ahighly efficient solar ene...
碳化硅的化学机械抛光
AbstractSlurry compositions and chemically activated CMP methodsfor polishing a substrate having a silicon carbide surfa...
碳化硅单晶的制造方法
The soft surfaced particles in slurries according to embodi-ments of the invention have been found to unexpectedly pro-v...
低微管100mm碳化硅晶片
AbstractA high quality single crystal wafer ofSiC is disclosed havinga diameter ofat least about 100 mm and a micropipe ...
300mm直径硅片湿洗槽出水口设计
Water motions influenced by an outlet of a batch-type 300-mm diameter silicon wafer wet cleaning bath were experimentall...
硅片湿法清洗槽中兆声波下的水和气泡运动
The influences of a megasonic wave on water and bubblemotions in a wet cleaning bath used for 300 mm-diameter siliconwaf...
湿处理过程中硅介质上污染物的沉积
AbstractThe evaluation of photovoltaic man-ufacturing wet process steps shows howimpurities may be deposited on siliconm...
稀释HF清洗过程中硅表面颗粒沉积的机理
The mechanism of particle deposition onto silicon wafer suraces during dilute HF cleans is discussed. Direct surface for...