湿法解决方案 半导体资材 泛半导体湿法实验室 数据库
硅相关内容
当前位置： 网站首页 TAG: 硅
氮化硅对硅和二氧化硅的高选择性蚀刻
A highly selective dry etching process for the removal of silicon nitride (SiN,) layers from siliconand silicon dioxide ...
GaN在多孔硅衬底上的MOCVD生长
Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganicchemical vapor dep...
硅片减薄集成工艺
Abstract A low cost and reliable wafer thinning process for Through Silicon Via (TSV) based three dimensional system ...
切割技术对薄硅强度性能影响的研究
Abstract Thin silicon offffers a variety of new possibilities in microelectronical, solar and micromechanical industrie...
湿法刻蚀三维集成电路硅片减薄技术
INTRODUCTIONSemiconductors have been miniaturized by applying Moore’s Law. However, developments toward miniaturization...
用于高芯片强度的湿化学硅片减薄工艺
Introduction Three-dimensional (3D) integration using through silicon via (TSV) interconnects has been deve...
用于晶片到晶片堆叠的硅减薄工艺的表征
Abstract— Wafer-to-wafer 3D integration has a potential to minimize the Si thickness, which enables us to connect mult...
碳化硅的化学机械抛光
In this research, we conducted a series of experiments to investigate the mechanisms of chemical mechanical polishing (C...
碳化硅的化学机械抛光
ABSTRACT In an effort to improve silicon carbide (SIC) substrates surfaces prior to epitaxial growth, two chemomechanica...
碳化硅与锗合金的电学特性
As an electronic material for high power, high voltage applications, silicon carbide (SiC) would be more versatile if su...