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高效多晶硅太阳能电池的热氧化工艺
ABSTRACT: For solar cells with highest efficiencies, thermally grown oxides are used for surface passivation. In this pa...
碳化硅的热氧化：n 型和 p 型掺杂外延层的比较
Silicon carbide has been considered as the most promising wide band gap semiconductor for high-temperature, high-voltage...
SC-1溶液中硅片上过渡金属离子的吸附种类
OVERVIEW: In the 0.1-µm age, it will be possible to build more than one billion transistors on a silicon chip welcoming ...
实现新的硅表面处理标准的湿法清洁方法
Oxide and Hydride Silicon Surface Termination Oxide terminating cleans suffice for processes that don’t restrict a subse...
无氧化物硅的湿化学表面功能化
Abstract Silicon is by far the most important semiconductor material in the microelectronic industry mostly due to the...
硅片水处理过程中监测金属污染的方法
An optical technique based on simple absorption spectroscopy has been demonstrated for monitoring metal contaminant depo...
超薄单晶硅微结构
ABSTRACTThis paper discusses the fabrication of submicron p'microstructures for a number of MEMS applications using boro...
硅在HF溶液中的阳极溶解
The impedance response of n, p-, n', and p* silicon was studied during dissolutionropolishing inHE solutions. Charac...
氢氟酸蚀刻后氧化碳化硅表面的化学性质
Abstract:Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching processthat is now well u...
硅微加工的HF溶液中的电化学刻蚀
Abstract Electrochemical etching of silicon in hydroflfluoric acid (HF) solution is employed as a micromachining techniq...