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晶体硅结构的选择性湿蚀刻工艺优化
ABSTRACT Lattice-selective etching of silicon is used in a number of applications, but it is particularly valuable in t...
湿法蚀刻MEMS硅腔的工艺控制
Introduction Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants ...
多晶硅锗的 MEMS 薄膜封装
AbstractThis paper presents an attractive poly-SiGe thin-fifilm packaging and MEM (microelectromechanical) platform tech...
实现硅晶片中铜填充TSV的新型电镀技术
ABSTRACT Through-Silicon-Vias (TSVs) continue to stand out as the most promising technology for electrical interconnec...
电镀温度对硅晶片上化学镀非晶 Ni-P 膜的影响
Abstract Nickel-phosphorus(NiP) film was depositedby electroless process on the surface of p-type polycrys-talline silic...
热退火对硅通孔中铜微观结构的影响
ABSTRACT In this paper, we have studied the microstructure evolution of one-year room-temperature-aged Through-Silicon...
APCVD法生长的硅纳米线的化学表面钝化
1. IntroductionIn recent years, nanowires including nanorods based solar cells have attractive interest due to their cha...
HF溶液中硅蚀刻过程中银的双重作用
BackgroundBy etching silicon in a HF aqueous solution, porous silicon can be formed. When silicon etching in the HF solu...
等离子体中硅刻蚀的机理
INTRODUCTIONCircuit patterns are transferred to silicon by exposing surfaces of this material to the species formed in f...
碳化硅器件加工过程化学浓度控制
IntroductionFor the last 20 years, SiC has been investigated as a replacement for traditional etch stops in bulk microm...
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