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碳化硅和二氧化硅之间稳定性的刻蚀选择性
Introduction Commonly for wet batch cleaning, Si3N4 is removed in a hot H3PO4 bath. This was used primarily for the re...
硅晶片的酸刻蚀
Polished silicon wafers are prepared through various mechanical and chemical processes. First, the silicon single-crysta...
克服太阳能电池湿化学加工过程中硅堆积的影响
Introduction Although the chemical reaction is well known, the anisotropic etching of Si in alkaline solutions is a co...
用于微波功率应用的碳化硅
ScopeDiamond and Related Materials is an international, interdisciplinary journal which publishes articles covering both...
用于5G应用的后处理多孔硅
1. Introduction5G is the next generation of mobile networks and will achieve speeds of several Gb/s. 5G is therefore des...
硅的等离子体化学刻蚀
I. INTRODUCTIONThe progress in development nano- and microelectromechanical devices and systems promises the same revolu...
HF-HCl-H2O2混合物在单晶硅晶片上的结构分析
INTRODUCTIONWet-chemical treatments of silicon surfaces are frequently used for several different processing steps in p...
磷酸中二氧化硅的选择性湿法蚀刻方法
In the semiconductor manufacturing, silicon nitride (Si3N4) and silicon dioxide (SiO2) are the most typical and widely-u...
磷酸湿化学蚀刻改进多晶硅片太阳能电池的方法
1. Introduction Silicon nitride (SiN) thin films are widely used in various microelectronic and optoelectronic devices ...
通过旋涂在单晶硅晶片上形成发射极层
1. IntroductionDuring last decades, the researcher mainly focused on cell efficiency improvement and watt peak cost red...