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醇碱溶液中多孔硅的化学氧化
Passivation of the internal surface of porous silicon (pSi), where the reactive hydride-terminated bonds are replaced wi...
去除碳化硅衬底中的表面污染物
Wide bandgap semiconductors are becoming the new platform of choice for devices with greater power density and higher e...
n型多孔硅刻蚀时间的效应
Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been us...
硅表面的化学处理对碳化硅外延薄膜质量和结构的影响
Abstract—The fundamentals of a new technique for the cleaning and passivation of (111), (110), and (100) silicon wafer s...
硅薄膜太阳能电池应用中氧化锌的电化学蚀刻
A novel approach is presented for introducing a surface morphology with beneficial light scattering properties to sputt...
单晶硅碱性和铜碱酸溶液各向异性蚀刻特性的差异
Silicon (Si) surface texturing is an indispensable step for the fabrication of Si solar cells due to the high refection ...
氧化剂溶液中碳化硅的摩擦化学抛光
Tribochemical polishing TCP has been applied to finish polycrystalline silicon carbide samples. With this technique, mat...
异丙醇浓度和刻蚀时间对硅晶片湿化学各向异性刻蚀的影响
A micropyramid structure was formed on the surface of a monocrystalline silicon wafer (100) using a wet chemical anisotr...
金属辅助化学蚀刻制备硅纳米线：H2O2 浓度的影响
In the current study, monocrystalline silicon nanowire arrays (SiNWs) were prepared through a metal-assisted chemical et...
晶片清洗和退火对玻璃/硅晶片直接键合的影响
We studied cleaning and annealing effects in glass/Si direct bonding using 4 inch Pyrex glass and silicon wafers. SPM cl...