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InP光子学与硅电子学的集成
Abstract—Intimate integration of photonics with electronics is regarded as the key to further improvement in bandwidth,...
沉积温度对多晶硅特性影响的表征
Low pressure chemically vapor deposited polysilicon deposition was studied from 525 to 650℃ The silicon appears to be a...
在制造过程中去除氮化硅和其他材料的方法
Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these ma...
单晶硅的完整 3D蚀刻轮廓分析
We have developed an anisotropic-chemicaletching process simulation system, MICROCAD, which is equipped with a database ...
多晶硅表面改性技术以减少微观结构的粘附
A new and simple surface-modification technique is proposed to reduce sticking of microstructures fabricated by surface ...
用于 MEMS 的干式硅蚀刻
Silicon etching is an essential process step for the fabrication of micro-electro-mechanical systems (MEMS). As we enter...
硅等离子蚀刻工艺产生的表面粗糙度
The authors used atomic force microscopy to analyze the roughness generated on c-Si (100) surfaces when etched in high-d...
硅谐振器的晶圆级封装技术
Recently, a family of low frequency silicon resonators with AlN piezoelectric activation has been developed. These devic...
SC-1处理后的硅晶片的TXRF分析
Silicon wafer cleaning is the most frequently applied processing step in the integrated circuit manufacturing sequence. ...
利用不同表面纹理参数进行的硅晶片表面反射率研究
This paper discusses surface texturization of monocrystalline silicon wafer h100i by using a very simple and cost effect...