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蓝宝石和二氧化硅上单层MoS2的晶片级MOCVD生长
The typical growth of MoS2 involves carrier gases of 350 sccm Ar, 10 sccm of H2 and 8 sccm of diethyl sulphide at the gr...
碳化硅原料合成炉国际招标公告
招标项目名称:碳化硅原料合成炉招标产品列表(主要设备):8吋兼容6吋碳化硅单晶生长炉 66、感应法不锈钢腔体SiC单晶生长炉90、感应法双石英管腔体SiC单晶生长炉60、碳化硅原料合成炉12招标文件领购开始时间:2023-05-24招标文件...
超声波振动对硅片抛光过程中材料去除的影响
The present experimental investigation attempts to understand and address the effect of ultrasonic vibrations on materia...
用于生长 III-V 族纳米结构的预图案化硅衬底
This paper reviews the recent progresses obtained by direct growth of III–V semiconductor quantum dots (QDs) on prepatte...
高阻多晶硅作为晶圆级封装中的射频基板
Passive components, such as spiral inductors, transmission lines, and antennas, are limiting the performance and reducti...
多孔硅的导热率、光导率和电导率的变化
Porous silicon (PS) was prepared by electrochemical etching method. Mirage effect in transverse photothermal deflection ...
硅通孔的湿法工艺技术
After many years as a hypothetical possibility, 3D IC stacking has emerged as a potential key enabler for maintaining s...
用于连接CMOS IC的湿式蚀刻硅互换器
In this paper, a novel wet etched silicon interposer for optical interconnection applications has been proposed and fab...
氮化硅蚀刻槽-NB系列
氮化硅蚀刻工艺氮化硅刻蚀工艺用于集成电路制造，选择性地去除硅片表面的氮化硅。用作硅晶片上的掩模，进一步的制造工艺步骤需要去除氮化硅。含有磷酸和去离子水的溶液以最少的氧化物蚀刻氮化硅，同时不影响晶圆的其余部分。结果，氮化硅被有效地从晶圆表面剥...
消除氧化过程中产生的多晶硅孔缺陷
Gate Oxide failure analysis during technology qualification led to discovery of the polysilicon hole defects in large ...