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n 型硅晶片的无IPA纹理化
The application of an Isopropanol(IPA)-free potassium hydroxide (KOH) solution was evaluated in order to prepare random...
不同掺杂剂锗硅单晶的张电阻特性
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge ca...
用于毫米波系统的硅锗异质结双极晶体管
The “River Publishers Series in Electronic Materials and Devices” is a series of comprehensive academic and professional...
硅上的低温锗薄膜
We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-infrared detectors integra...
结晶锗和硅的电子光谱
A detailed calculation of the energy bands of germanium and silicon has been performed by use of the pseudopotential met...
衬底二极管对硅锗光电晶体管性能的影响
This paper provides a study on the substrate effect on the opto-microwave behavior of Silicon-Germanium Heterojunction...
衬底二极管对硅锗光电晶体管性能的影响
This paper provides a study on the substrate effect on the opto-microwave behavior of Silicon-Germanium Heterojunction...
迈向硅芯片上锗光源的单片集成
Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light effiffifficiently....
在氢氧化钾+羟胺溶液中高速蚀刻硅片上的穿孔
In the fabrication of complicated MEMS inertial sensors, there are many instances where metallisation cannot be done by ...
红外研究二氧化硅和二氧化锗的多晶型
The infrared spectra of coesite, low-temperature tridymite, low-temperature cristobalite- low-~emperature quartz, vitreo...