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具有宽带隙GaN 半导体的硅上集成光子学
The development of waveguides and photonic crystal(PhC) waveguides has been a topic of intense research effortduring the...
沉积温度对多晶硅特性影响的表征：形态、掺杂性、蚀刻性和多晶硅特性
Low pressure chemically vapor deposited polysilicon deposition was studied from 525 to 650~ The silicon appears tobe amo...
多孔硅的热导率、光导率和电导率随孔隙率的变化
Porous silicon (PS) was prepared by electrochemical etching method. Mirage effect in transverse photothermal deflectionP...
用于替代 KOH硅湿法蚀刻的聚合物掩模保护
A new cost-effective setup for silicon bulk micromachining is presentedwhich makes use of a polymeric protective coating...
在蚀刻溶液中使用不同c的氢氧化钠优化硅晶片的硅晶片
Surface texturing is one of the methods that improve the conversion efficiency of silicon-based solarcells by increasing...
晶体硅表面金属污染物的化学和物理
A superior control over the surface chemistry of crystalline silicon in wet and dry am-bients is an essential requiremen...
过程化学品和去离子水以及硅表面
The choice of an adequate analytical technique for contamination control anddefect reduction in the semiconductor manufa...
用于连接 CMOS IC 和光电管芯的湿蚀刻硅中介层
In this paper, a novel wet etched silicon interposer for optical interconnectionapplications has been proposed and fabri...
用于可扩展硅通孔的湿法工艺技术
After many years as a hypothetical possibility, 3D IC stacking has emerged as apotential key enabler for maintaining sem...
氧化温度对硅晶片热氧化合成的氧化硅 FT-IR 光谱中 (1000–1300) Cm− 1 谱带的影响
ln this work, silicon wafers were thermal treated in air at temperatures varied in the range 800-1200°CThe annealed samp...