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硅衬底上的高度规模化 GaN 互补技术
Abstract— This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate to push its pe...
低致密氢化非晶硅的微观结构及其在硅异质结太阳能电池中的应用
The application of thin underdense hydrogenated amorphous silicon (a-Si:H) films for passivation of crystalline Si (c-Si...
化学清洗程序和热氧化工艺对硅表面突变台阶上 MOS 栅极氧化物均匀性的影响
Abstract—This work analyzes the influence of some chemical steps used in standard cleaning recipes on the surface micro...
半导体资料丨TiN 薄膜沉积，氧化铝薄膜，化学镀沉积金属薄膜
热原子层沉积 TiN 薄膜沉积温度的影响In this study, the effect of deposition temperature of TiN thin films deposited using the thermal at...
半导体资料丨溅射外延、Micro-LED集成技术、化学蚀刻法制备MSHPS
Si上 AIN 和 GaN 的溅射外延(111) Sputter epitaxy is a low-cost process suited for the deposition of group-III-nitride semiconduc...
半导体资料丨铌酸锂光子集成电路、碳化硅光子应用、ACL蚀刻
硅衬底上的高度规模化 GaN 互补技术 This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate topu...
半导体资料丨湿法刻蚀锗，过氧化氢点解刻蚀，Cu电镀
用湿法腐蚀法从块状锗衬底上制备亚10 um厚的锗薄膜 Low-detect density Ge thin films are crucial for studying the impact of deect density on the ...
半导体资料丨氧化锌、晶体硅/钙钛矿、表面化学蚀刻的 MOCVD GaN
蚀刻时间和过氧化氢浓度对ZnO玻璃基板的影响The purpose of the study is to determine the best technique for etching ZnO thin films. ZnO is dep...
碳化硅基板抛光整体解决方案
Present silicon carbide substrate polishing process including lapping, bulk polishing, and fine polishing. We are now p...
碳化硅化学机械抛光技术最新进展
Abstract: Silicon Carbide (SiC) as the third generation semiconductor material has a very high surface quality requirem...