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超细金属颗粒在硅片表面的行为
Keywords: Wafer cleaning, surface preparation, wet etch, scaling, semiconductor trendsAbstract. The semiconductor indust...
硅各向异性湿法刻蚀剖面演化的三维模拟
1. IntroductionRefifined control of etched profifiles is one of the most important tasks of MEMS manufacturing process. ...
前端清洗工艺中的硅化物残留
Abstract— Salicide Residue is a common and well-known defect in CMOS technology of semiconductor wafer fabrication indus...
硅碱性蚀刻中的绝对蚀刻速率
The absolute etch rate of silicon (1 1 1) during wet chemical etching in aqueous KOH solution has been investigated with...
硅上磷化膜的光子集成
Abstract: A new photonic integration technique is presented, based on the use of an indium phosphide membraneon top ofa ...
InP硅集成的均匀性研究
AbstractIn this paper we study the uniformity of up to150 mm in diameter wafer-scale Ill-V epitaxial transferto the Si-o...
多晶硅片表面过渡金属污染的影响
ABSTRACT: A method for transition metal sampling on the surface of as-cut and isotextured multicrystalline siliconwafers...
多晶硅刻蚀方法
AbstractPurpose - The purpose of this paper is to present a selective wet-etching method of boron doped ow-pressure chem...
硅片上亚微米颗粒的去除方法
In order to successfully clean particulate contamination from wafer surfaces, it isnecessary to understand the adhesion ...
通过湿化学蚀刻去除伪多晶硅栅极
For the gate last integration scheme, dummy poly silicon gateremoval is one of the indispensable processes either for a ...