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盐酸等溶液中GaAs和InP的选择性湿蚀
Experimental Materials used for the etching studies were Fe-doped InP and Cr-doped GaAs substrates, and GaInP grown on...
湿化学处理后InP表面的研究
All samples were Zn-doped (3 × 1017 cm−3) p-type InP (100) substrates. The samples were ex situ treated in either as pre...
InP 中对准 V 型槽的湿法化学蚀刻
Iron-doped InP substrates with (i00) orientation and mirror-polished finish were used for the etch experiments. After ...
通过新型蚀刻和清洁方法改善半绝缘InP衬底的表面质量
InP is an important III-V semiconductor for both electronic and photonic devices due to its good thermal conductivity, h...
InP光子学与硅电子学的集成
Abstract—Intimate integration of photonics with electronics is regarded as the key to further improvement in bandwidth,...
InP晶体管的热管理改进方法
A method to improve the thermal management of indium phosphide (InP) double-hetero bipolar transistors (DHBTs) fabricate...
刻蚀掩模和刻蚀溶液对 InP 微加工形成 V 形槽的影响
Realization of low-cost and reliable packaging techniques to couple the optical fiber with the photodetector has become ...
InP基波导：ECR 等离子蚀刻和湿化学蚀刻的比较
Indium phosphide is the material of choice for monolithic integration of optical components.This material system is suit...
异质集成 InP-Si 片上光子元件的优化
摘要我们对III-V/si基混合波导系统进行了全面的数值研究，作为集成的III-V量子点发射器与集成在硅衬底上的片上量子光子集成电路之间的有效光耦合平台。我们提出了一个由一个混合的InP/Si波导和一个嵌入的InAs量子点组成的平台，在近1...
异构集成InP-Si片上光子元件的优化
Abstract: We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platf...