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基于氢氧化钾各向异性刻蚀的高固硅微针制备
Abstract This thesis presents the research on the high solid silicon microneedles fabrication based on KOH anisotropic ...
硅的湿法化学刻蚀机理
ABSTRACT We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of c...
硅加工中化学刻蚀缺陷修饰与表面抛光的回顾与统一分析
A comprehensive review of dynamics of etching and its various applications in silicon wafer processing is accomplished, ...
晶体硅各向异性湿法化学刻蚀过程中的表面形貌
Abstract. The rich variety of micron-scale features observed in the orientationdependent surface morphology of crystalli...
KOH湿法刻蚀下GaN纳米柱的刻面机制
摘要本研究提出了一种通过顶向（top-down）方法，结合等离子体蚀刻和室温氢氧化钾（KOH）湿处理工艺，实现具有所需m-（甚至a-）取向非极性面的GaN柱的策略。事实上，GaN在KOH溶液中的蚀刻是一个各向异性过程，这意味着它允许在宏观尺...
用硝酸和氢氟酸刻蚀硅的研究
摘要：本文提出了一种数字蚀刻方法，以实现对蚀刻深度的精确控制。该方法使用HNO3氧化和BOE氧化物去除工艺的组合，对p+ Si和Si0.7Ge0.3的数字蚀刻特性进行了研究。实验表明，由于低激活能，氧化会随着时间的推移而饱和。提出了一种物理...
多晶钼纳米线的受控逐步湿法刻蚀
With the persistent downscaling of integrated circuits, molybdenum (Mo) is currently considered a potential replacement ...
III族氮化物微柱KOH湿法刻蚀表面钝化的分析研究
SUMMARYIII-Nitride micropillar structures show great promise for applications in micro light-emitting diodes and vertica...
半导体湿法刻蚀概述
IntroductionPattern TransferFor microsystems fabrication etch is a process that removes select materials fromthe wafer's...
各向异性热蚀刻对GaN基功能光子器件的刻蚀特性
InGaN/GaN-based group-III nitride semiconductors are the most promising candidate materials for highly functional active...