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CMOS-MEMS工艺气相HF刻蚀速率及其晶圆级均匀性的实验分析
本文介绍了CMOS- MEMS工艺中使用蒸汽氢氟酸(HF)的释放步骤的表征结果，该结果是通过一种控制CMOS-MEMS器件释放蚀刻工艺的新方法获得的。研究了释放孔尺寸对蚀刻速率和均匀性的影响。对于尺寸在0.48 m2和1 m2之间的释放孔，...
单片湿法刻蚀稀释氟化氢二氧化硅薄膜表面化学反应模型
A surface chemical reaction model of silicon dioxide fifilm etching by hydrogen flfluoride aqueous solution using a sing...
硅各向异性湿法刻蚀剖面演化的三维模拟
1. IntroductionRefifined control of etched profifiles is one of the most important tasks of MEMS manufacturing process. ...
基于湿法刻蚀工艺的MEMS结构的研究
Abstract In this paper, fabrication methods are developed in order to realize the silicon microelectromechanical systems...
多晶硅刻蚀方法
AbstractPurpose - The purpose of this paper is to present a selective wet-etching method of boron doped ow-pressure chem...
湿法刻蚀三维集成电路硅片减薄技术
INTRODUCTIONSemiconductors have been miniaturized by applying Moore’s Law. However, developments toward miniaturization...
单晶锗刻蚀速率的研究
A study has been made of the rate at which single-crystal germanium is etched under various conditions. For simplicity,...
硅微加工的HF溶液中的电化学刻蚀
Abstract Electrochemical etching of silicon in hydroflfluoric acid (HF) solution is employed as a micromachining techniq...
等离子体中硅刻蚀的机理
INTRODUCTIONCircuit patterns are transferred to silicon by exposing surfaces of this material to the species formed in f...
碳化硅和二氧化硅之间稳定性的刻蚀选择性
Introduction Commonly for wet batch cleaning, Si3N4 is removed in a hot H3PO4 bath. This was used primarily for the re...