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硅晶片的酸刻蚀
Polished silicon wafers are prepared through various mechanical and chemical processes. First, the silicon single-crysta...
硅的等离子体化学刻蚀
I. INTRODUCTIONThe progress in development nano- and microelectromechanical devices and systems promises the same revolu...
KOH刻蚀的颗粒沉积
KOH etching is widely used in connection with micromachining of microelectromechanical systems ~ MEMS! . As an example, ...
金刚石薄膜的等离子体沉积与刻蚀
Introduction Plasma-deposited carbon thin films have been receiving increasing attention due to their excellent mechani...
8寸氧化硅刻蚀加腔项目中标结果公告
项目名称：8寸氧化硅刻蚀加腔项目招标产品列表(主要设备):8寸氧化硅刻蚀加腔项目1招标人：上海积塔半导体有限公司开标时间：2023-03-28 09:30公示时间：2023-03-31 11:40 - 2023-04-03 23:59中标结...
碳化硅在碱性溶液中的阳极刻蚀
1. Introduction There is strong renewed interest in silicon carbide (SiC) for device applications. With a favourable lat...
用于刻蚀多晶硅表面的HF-HNO3-H2SO4/H2O混合物
Wet chemical etching is of enormous relevance to silicon solar cell processing. Conventional acidic etching mixtures con...
SiGe的选择性化学湿刻蚀
In this paper, a comprehensive study of the etching behavior of this high selectivity etchant is presented, including th...
SiO2在氢氟酸中的刻蚀机理
The reaction stops at the Si surface and leaves the surface hydrogen passivated. This property is of the utmost importa...
基于氧化的 AlGaN 或 GaN 异质结构湿法刻蚀方法
In this study, a novel wet etching technique for AlGaN/GaN heterostructures using dry thermal oxidation followed by wet ...