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晶圆清洗：湿法仍然领先
There are two principal methods of cleaning wafers: gas-phase - dry cleaning - (Figs. 1 & 2) and liquid phase - wet cle...
硅通孔的湿法工艺技术
After many years as a hypothetical possibility, 3D IC stacking has emerged as a potential key enabler for maintaining s...
上海新微技术研发中心有限公司湿法去胶剥离机台采购项目中标结果公告
项目名称：上海新微技术研发中心有限公司湿法去胶剥离机台采购项目项目编号：0705-234006053015招标产品列表(主要设备)：湿法去胶剥离机台 1台/套招标机构：上海国际招标有限公司招标人：上海新微技术研发中心有限公司开标时间：20...
用于去除 CxHyFz 蚀刻的湿法清洁工艺
A method for cleaning etch residues that may include treatingan etched surface with an aqueous lanthanoid solution,where...
使用 AI 离子对 H 3 PO 4 中的GaN进行湿法化学蚀刻
We have studied selective wet chemical etching of epitaxial GaN layers grown on SiC substrates. Molten KOH and hot ortho...
用于可扩展硅通孔的湿法工艺技术
After many years as a hypothetical possibility, 3D IC stacking has emerged as apotential key enabler for maintaining sem...
研究多晶硅片湿法化学蚀刻响应的新技术
目前的工作旨在展示一种技术的应用，即结合白光干涉测量（WLI）和劳伊x射线晶体学扫描仪表征来研究金刚石切割多晶硅（mc-Si）晶片的化学蚀刻响应。利用该技术，通过检测蚀刻前后mc-硅表面的形貌来评估不同的纹理添加剂（异丙醇、次氯酸钠）的影响...
硅的湿法化学刻蚀机理
ABSTRACT We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of c...
湿法加工过程中污染物在硅介质上的沉积
AbstractThe evaluation of photovoltaic man-ufacturing wet process steps shows howimpurities may be deposited on siliconm...
湿法清洗过程中金属杂质在硅片和液体界面处偏析
ABSTRACT It is crucial to make Si wafer surfaces ultraclcan in order to realize low-temperature processing and high-sele...