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铜锌锡硫薄膜的化学气相沉积
There is considerable recent interest in Cu,ZnSnS. (CZTS) dueto its excellent properties for use in solar cell applicati...
TSV芯片中超临界二氧化碳电镀铜参数的研究
Abstract This study uses supercritical electroplating for the filling of through silicon vias (TSVs) in chips. The pres...
铜电解沉积技术
Copper electrodeposition in high-aspect-ratio through-holes micromachined by deep reactive ion etching is one of the mos...
实现硅晶片中铜填充TSV的新型电镀技术
ABSTRACT Through-Silicon-Vias (TSVs) continue to stand out as the most promising technology for electrical interconnec...
电镀铜的优化表面预处理
AbstractWe investigated the ability of conventional pretreatment systems to eliminate the surface native oxide from copp...
动态化学镀铜沉积
The present paper describes a new direct chemical plating method of copper, called Dynamic Chemical Plating. This low co...
热退火对硅通孔中铜微观结构的影响
ABSTRACT In this paper, we have studied the microstructure evolution of one-year room-temperature-aged Through-Silicon...
磷酸电解液中铜电解抛光的机理研究
ExperimentalExperiments were performed on two different samples, standard Cu rotating disk electrodes from Pine Instrume...
过氧化氢对铜抛光的影响
Experimental Copper slurry preparation.— In this study, a hydrogen peroxide semiconductor grade, 30 wt % based slurry w...
HF溶液中硅基质的铜污染机理
As the dimensions of semiconductor devices are downsized, aiming at manufacturing VLSI and ULSI circuits, the cleaning...