通过化学气相沉积( CVD ) 方法控制氧化锌纳米线阵列的生长

时间:2023-05-22 13:34:08 浏览量:0

The Nanostructured materials like nanotubes, nanowires,  nanorods, and nanobelts etc. have remained the subject of interest  these days because of its unique thermal, mechanical and optical  properties. Zinc Oxide (𝑍𝑛𝑂), is the most attractive material due  to its unique properties and availability of a variety of growth  methods. At nanostructured level, the properties of 𝑍𝑛𝑂 can be  altered by controlling the growth process, such as the shape, size,  morphology, aspect ratio and density control. In this work,  Aligned 𝑍𝑛𝑂 Nanowires (NWs) were successfully synthesized by  Chemical Vapor Deposition (CVD) on Aluminum doped Zinc  Oxide (AZO) substrate. The effects of different growth parameters  such as growth temperature, flow rate of oxygen and distance of  substrate from source on growth of aligned 𝑍𝑛𝑂 NWs have been  investigated and discussed in detail. Morphologies and structures  of grown nanowire arrays were characterized by Scanning  Electron Microscopy (SEM) and X-ray diffraction (XRD). Optical  properties were optimized by UV-visible transmittance spectra,  and photo luminescence (PL).


The diameter and density of nanowires were controlled  by the distance between substrate and source. After the  growth, the tube furnace was cooled down to room  temperature.


In CVD process, morphology and the structure of a final  product can be controlled by the temperature and the level  of super-saturation. Generally, for the growth of nanowire  arrays, the growth direction and rate are two important  factors which determine whether a nanowire can be formed.  However, the growth rate mainly depends on the growth  temperature . In order to study the effect of temperature  on 𝑍𝑛𝑂 nanowire arrays, we used three different  temperatures i.e. 540°𝐶 , 560°𝐶 and 580°𝐶 . The growth  parameters are illustrated in Table-1, and the morphologies  of these samples were analyzed by SEM shown in Fig.1.


In order to study the effect of oxygen flow on the growth of  𝑍𝑛𝑂 nanowires, we used different flow rates as 8 𝑠𝑐𝑐𝑚,  9 𝑠𝑐𝑐𝑚 and 10 𝑠𝑐𝑐𝑚 oxygen flows. Growth parameters are  listed in Table-2, and the SEM images are shown in Fig.2.  From the figure we can see that well aligned nanowires were  grown for these three parameters, and in this case, the  oxygen flow has little effect on the diameter and relatively  density. As we know, nanowire diameter and density are crucial for coating the shell layer on 𝑍𝑛𝑂 nanowires. If the  density is too high or the diameter is too large, it will be  difficult to deposit a shell layer around the entire 𝑍𝑛𝑂 nanowires. For low density or small diameter, the shell  deposition is easier but it reduces light absorption which  degrades the efficiency of device. By changing the flow rate  we can control the density of nanowires, and can get a  favorable condition for the growth of coaxial nanowires.


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Fig1


In order to study the effect of oxygen flow on the growth of  𝑍𝑛𝑂 nanowires, we used different flow rates as 8 𝑠𝑐𝑐𝑚,  9 𝑠𝑐𝑐𝑚 and 10 𝑠𝑐𝑐𝑚 oxygen flows. Growth parameters are  listed in Table-2, and the SEM images are shown in Fig.2.  From the figure we can see that well aligned nanowires were  grown for these three parameters, and in this case, the  oxygen flow has little effect on the diameter and relatively  density. As we know, nanowire diameter and density are crucial for coating the shell layer on 𝑍𝑛𝑂 nanowires. If the  density is too high or the diameter is too large, it will be  difficult to deposit a shell layer around the entire 𝑍𝑛𝑂 nanowires. For low density or small diameter, the shell  deposition is easier but it reduces light absorption which  degrades the efficiency of device. By changing the flow rate  we can control the density of nanowires, and can get a  favorable condition for the growth of coaxial nanowires.


From the above different experiments, we conclude that the  growth parameters for well-aligned 𝑍𝑛𝑂 nanowires were  used as 1.0 𝑔 of high-purity 𝑍𝑛 powder, 𝑁2 flow rate of  100 𝑠𝑐𝑐𝑚 , 𝑂2 flow rate of 8 𝑠𝑐𝑐𝑚 , growth temperature  580°𝐶 and the substrate position 8 𝑐𝑚 away from source  material.


In summary, well aligned 𝑍𝑛𝑂 nanowire arrays have been  synthesized by CVD. Different parameters, such as growth  temperature, oxygen flow rate, and 𝑍𝑛 vapor pressure, have  been modified to obtain the suitable conditions for aligned  𝑍𝑛𝑂 nanowire arrays.

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